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EDA-ModelleEasyEDA
TI CSD17327Q5A
| Hersteller | |
| Herst.-Teilenr. | CSD17327Q5A |
| LCSC-Nr. | C2864353 |
| Verp. | VSONP-8(5x6) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 65A VSONP-8(5x6) |
| Datenblatt | TI CSD17327Q5A |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | VSONP-8(5x6) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 343pF | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 506pF | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss) | 33pF | |
| RDS(on) | 9.9mΩ@8V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 2.8nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | VSONP-8(5x6) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 343pF | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 506pF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss) | 33pF | |
| RDS(on) | 9.9mΩ@8V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 2.8nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Type | N-Channel |
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | VSONP-8(5x6) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 343pF | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 506pF | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss) | 33pF | |
| RDS(on) | 9.9mΩ@8V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 2.8nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | VSONP-8(5x6) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 343pF | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 506pF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss) | 33pF | |
| RDS(on) | 9.9mΩ@8V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 2.8nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Type | N-Channel |
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C2864353 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |