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HXY MOSFET HPESDNC2FD3V3BA
| Produttore | HXY MOSFETAsian Brands |
| Cod. Prod. | HPESDNC2FD3V3BA |
| Cod. LCSC | C22440174 |
| Imballo | DFN1006-2L |
| Numero Cliente | |
| Attr. chiave | ESD DIODE 3.3VWM 11VC DFN1006-2L |
| Scheda Tecnica | HXY MOSFET HPESDNC2FD3V3BA |
| Parti alternative | 5 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Produttore | HXY MOSFET | |
| Imballo | DFN1006-2L | |
| Clamping Voltage | 11V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 9A | |
| Peak Pulse Power Dissipation (Ppp) | 100W@8/20us | |
| Voltage - Breakdown | 6.5V | |
| Number of Channels | Single-channel | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 50nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Produttore | HXY MOSFET | |
| Imballo | DFN1006-2L | |
| Clamping Voltage | 11V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 9A | |
| Peak Pulse Power Dissipation (Ppp) | 100W@8/20us |
| Tipo | Descrizione | |
|---|---|---|
| Voltage - Breakdown | 6.5V | |
| Number of Channels | Single-channel | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 50nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
Descrizione
HPESDNC2FD3V3BA protects sensitive semiconductor components from damage or malfunction caused by ESD and other voltage-induced transient events. Excellent clamping capability, low leakage, low capacitance, and fast response time deliver best-in-class protection for ESD-susceptible designs. It enables designers to flexibly protect a single bidirectional line in applications where arrays are not suitable. Available in DFN1006-2L package.
Caratteristiche
- Small package outline
- Low profile height
- Peak power up to 105W at 8×20μs pulse
- Low leakage current
- Typical response time less than 1ns
- Human Body Model Level 3 ESD rating
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Produttore | HXY MOSFET | |
| Imballo | DFN1006-2L | |
| Clamping Voltage | 11V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 9A | |
| Peak Pulse Power Dissipation (Ppp) | 100W@8/20us | |
| Voltage - Breakdown | 6.5V | |
| Number of Channels | Single-channel | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 50nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Produttore | HXY MOSFET | |
| Imballo | DFN1006-2L | |
| Clamping Voltage | 11V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 9A | |
| Peak Pulse Power Dissipation (Ppp) | 100W@8/20us |
| Tipo | Descrizione | |
|---|---|---|
| Voltage - Breakdown | 6.5V | |
| Number of Channels | Single-channel | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 50nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
Descrizione
HPESDNC2FD3V3BA protects sensitive semiconductor components from damage or malfunction caused by ESD and other voltage-induced transient events. Excellent clamping capability, low leakage, low capacitance, and fast response time deliver best-in-class protection for ESD-susceptible designs. It enables designers to flexibly protect a single bidirectional line in applications where arrays are not suitable. Available in DFN1006-2L package.
Caratteristiche
- Small package outline
- Low profile height
- Peak power up to 105W at 8×20μs pulse
- Low leakage current
- Typical response time less than 1ns
- Human Body Model Level 3 ESD rating
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |