ST M24512E-FMN6TP

The M24512E-F is a 512-Kbit |²C -compatible EEPROM (electrically erasable programmable memory) organized as 64 Kx8 bits. The device can operate with a supply voltage from 1.6 V to 5.5 V with a clock frequency of 1 MHz (or less), over an ambient temperature range of -40 ℃ /+85 ℃. The M24512E-F offers three 8-bit registers. The device type identifier (DTI) register permanently locked in readonly mode. The configurable device address (CDA) register authorizing the user, through software, to configure up to eight possibilities of chip enable address. The software write protection (SWP) register authorizing the user, through software, to write protect partial or full memory array. Moreover, the M24512E-F offers an additional page, named the identification page (128-byte). The identification page can be used to store sensitive application parameters which can be (later) permanently locked in read-only mode. The M24512E-F is available in the standard 8-pin TSSOP8, SO8N, and UFDFPN8 with the WC pin. On demand, the EEPROM can be delivered with a preprogrammed and locked device address.

• Compatible with the following I²C bus modes: 1 MHz (fast mode plus), 400 kHz (fast mode), 100 kHz (standard mode)
• 512-Kbit (64-Kbyte) of EEPROM Page size: 128-byte Additional 128-byte identification page
• Wide voltage range: From 1.6 V to 5.5 V
• Operating temperature range: From -40 ℃ up to +85 ℃
• Byte and page write within 4 ms (3.1 ms typical)
• Enhanced ESD/latch-up protection
• More than 4 million write cycles
• More than 200-year data retention
• Fast wake-up time (less than 5μs)
• 330 nA (typ) in Standby mode
• 100 μA (typ) for read current
• 360 μA (typ) for write current
• Configurable device address register
• Device type identifier register (in read-only)
• Preprogrammed device address
• Software write protection register
• Hardware write protection of the whole memory array
• Random and sequential read modes
• SO8N, TSSOP8, and UFDFPN8 (ECOPACK2)