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EDA-ModelleEasyEDA
VBsemi Elec STB4NK60ZT4-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | STB4NK60ZT4-VB |
| LCSC-Nr. | C20626323 |
| Verp. | TO-263(D2PAK) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 650V 4.5A TO-263(D2PAK) |
| Datenblatt | VBsemi Elec STB4NK60ZT4-VB |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 177pF | |
| Current - Continuous Drain(Id) | 4.5A | |
| Ciss-Input Capacitance | 1.417nF | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 177pF | |
| Current - Continuous Drain(Id) | 4.5A | |
| Ciss-Input Capacitance | 1.417nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low Gate Charge Qg Results in Simple Drive Requirement Available
- Improved Gate, Avalanche and Dynamic dV/dt RoHS Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.6467 | $ 0.65 |
| 10+ | $ 0.5249 | $ 5.25 |
| 50+ | $ 0.4641 | $ 23.21 |
| 100+ | $ 0.4048 | $ 40.48 |
| 500+ | $ 0.3686 | $ 184.30 |
| 1,000+ | $ 0.3505 | $ 350.50 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 177pF | |
| Current - Continuous Drain(Id) | 4.5A | |
| Ciss-Input Capacitance | 1.417nF | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 177pF | |
| Current - Continuous Drain(Id) | 4.5A | |
| Ciss-Input Capacitance | 1.417nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low Gate Charge Qg Results in Simple Drive Requirement Available
- Improved Gate, Avalanche and Dynamic dV/dt RoHS Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
C20626323 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| VBL165R04 | VBsemi Elec | Ähnliche | TO-263(D2PAK) | 25 | $0.5304 $0.624 | ||
| IRF840S-VB | VBsemi Elec | Ähnliche | TO-263(D2PAK) | 50 | $ 1.0641 | ||
| IRF830ASTRLPBF-VB | VBsemi Elec | Ähnliche | TO-263(D2PAK) | 29 | $0.8989 $1.0575 | ||
| R5005CNJTL-VB | VBsemi Elec | Ähnliche | TO-263(D2PAK) | 200 | $ 1.2105 | ||
| B6NK60Z TO263-VB | VBsemi Elec | Ähnliche | TO-263(D2PAK) | 15 | $0.9110 $1.0717 |