Infineon CY15B102N-ZS60XET

The CY15B102N is a 128K×16 nonvolatile memory with read/write operation similar to standard SRAM. Ferroelectric RAM (F-RAM) is nonvolatile, meaning data is retained after power removal. It provides more than 121 years of data retention while eliminating the reliability concerns, functional limitations, and system design complexity associated with battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make F-RAM superior to other memory types.

The CY15B102N operates like other RAM devices, allowing it to serve as a drop-in replacement for standard SRAM in a system. Read cycles can be initiated by CE or by an address change; write cycles can be initiated by CE or WE. Due to its unique ferroelectric storage technology, F-RAM is nonvolatile. These characteristics make the CY15B102N well suited for nonvolatile memory applications requiring frequent or rapid writes.

The device is offered in a 400-mil, 44-pin TSOP-II SMT package. Device specifications are guaranteed over the automotive Grade E temperature range of -40°C to +125°C.

• 2-Megabit F-RAM, logically organized as 128K × 16
• Configurable as 256K × 8 using UB and LB
• High endurance: 100 trillion (10¹³) read/write cycles
• 121-year data retention
• Zero-delay writes
• Page mode operation with 30ns cycle time
• Advanced high-reliability ferroelectric process
• SRAM-compatible
• Industry-standard 128K × 16 SRAM pinout
• 60ns access time, 90ns cycle time
• Software-programmable block write protection
• Superior to battery-backed SRAM modules
• No battery concerns
• Monolithic reliability
• True surface-mount solution with no rework steps required
• Excellent moisture, shock, and vibration resistance
• Low power consumption
• Operating current 7mA (typical)
• Standby current 120μA (typical)
• Low-voltage operation: VDD = 2.0V to 3.6V
• Automotive Grade E temperature range: -40°C to +125°C
• 44-pin TSOP II package
• RoHS compliant