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VBsemi Elec IPD60R3K3C6-VB product image
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VBsemi Elec IPD60R3K3C6-VB

Hersteller
VBsemi ElecAsian Brands
Herst.-Teilenr.
IPD60R3K3C6-VB
LCSC-Nr.
C18212470
Verp.
TO-252
Kundennummer
Hauptmerkm.
MOSFET N-CH 650V 4.5A TO-252
DatenblattVBsemi Elec IPD60R3K3C6-VB
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Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
HerstellerVBsemi Elec
Verp.TO-252
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage650V
Output Capacitance(Coss)177pF
Current - Continuous Drain(Id)4.5A
Ciss-Input Capacitance1.417nF
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss)7pF
RDS(on)2.1Ω@10V
Number1 N-channel
Gate Charge(Qg)48nC@10V
Gate Threshold Voltage (Vgs(th))5V
TypeN-Channel
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KI-Übersetzung
  • Low Gate Charge Qg Results in Simple Drive Requirement
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche Voltage and Current
  • Compliant to RoHS directive 2002/95/EC