MICROCHIP JANTX1N5620/TR
| Hersteller | |
| Herst.-Teilenr. | JANTX1N5620/TR |
| LCSC-Nr. | C17655424 |
| Verp. | Through Hole |
| Kundennummer | |
| Hauptmerkm. | 800V 1.3V@3A 1A Through Hole Single Diodes RoHS |
| Datenblatt |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | Through Hole | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 800V | |
| Operating Junction Temperature Range | -65℃~+200℃ | |
| Voltage - Forward(Vf@If) | 1.3V@3A | |
| Reverse Leakage Current (Ir) | 500nA@800V | |
| Current - Rectified | 1A | |
| Non-Repetitive Peak Forward Surge Current | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | Through Hole | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 800V |
| Typ | Beschreibung | |
|---|---|---|
| Operating Junction Temperature Range | -65℃~+200℃ | |
| Voltage - Forward(Vf@If) | 1.3V@3A | |
| Reverse Leakage Current (Ir) | 500nA@800V | |
| Current - Rectified | 1A | |
| Non-Repetitive Peak Forward Surge Current | - |
Beschreibung
This "standard recovery" rectifier diode series meets applicable standards for high-reliability applications where failures cannot be tolerated. These industry-recognized 1.0 ampere rated rectifiers, with working peak inverse voltages of 200 to 1000 volts, are encapsulated in a void-free glass construction with internal "one-level" metallurgical bonding. By adding the "US" suffix, these devices are also available in surface mount MELF package configurations (see separate datasheet for 1N5614US to 1N5622US). Microsemi also offers a wide range of other rectifier products to meet various current rating and recovery time speed requirements, including fast and ultrafast device types in both through-hole and SMT packages.
Merkmale
- Popular JEDEC registered 1N5614 to 1N5622 series
- Void-free hermetic glass package
- Triple passivation
- Internal "first level" metallurgical bonding
- Peak working reverse voltage 200 to 1000 volts
- JAN, JANTX, JANTXV, and JANS versions available per applicable specifications
- SMT equivalents also available in square-end MELF configuration with "US" suffix (see separate datasheet for 1N5614US to 1N5622US)
Anwendungen
- General rectifier applications including full-bridge, half-bridge, freewheeling diode, etc.
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 13.9426 | $ 13.94 |
| 200+ | $ 5.5634 | $ 1112.68 |
| 500+ | $ 5.3771 | $ 2688.55 |
| 1,000+ | $ 5.2863 | $ 5286.30 |
Standardgehäuse1/Full Reel | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | Through Hole | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 800V | |
| Operating Junction Temperature Range | -65℃~+200℃ | |
| Voltage - Forward(Vf@If) | 1.3V@3A | |
| Reverse Leakage Current (Ir) | 500nA@800V | |
| Current - Rectified | 1A | |
| Non-Repetitive Peak Forward Surge Current | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | Through Hole | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 800V |
| Typ | Beschreibung | |
|---|---|---|
| Operating Junction Temperature Range | -65℃~+200℃ | |
| Voltage - Forward(Vf@If) | 1.3V@3A | |
| Reverse Leakage Current (Ir) | 500nA@800V | |
| Current - Rectified | 1A | |
| Non-Repetitive Peak Forward Surge Current | - |
Beschreibung
This "standard recovery" rectifier diode series meets applicable standards for high-reliability applications where failures cannot be tolerated. These industry-recognized 1.0 ampere rated rectifiers, with working peak inverse voltages of 200 to 1000 volts, are encapsulated in a void-free glass construction with internal "one-level" metallurgical bonding. By adding the "US" suffix, these devices are also available in surface mount MELF package configurations (see separate datasheet for 1N5614US to 1N5622US). Microsemi also offers a wide range of other rectifier products to meet various current rating and recovery time speed requirements, including fast and ultrafast device types in both through-hole and SMT packages.
Merkmale
- Popular JEDEC registered 1N5614 to 1N5622 series
- Void-free hermetic glass package
- Triple passivation
- Internal "first level" metallurgical bonding
- Peak working reverse voltage 200 to 1000 volts
- JAN, JANTX, JANTXV, and JANS versions available per applicable specifications
- SMT equivalents also available in square-end MELF configuration with "US" suffix (see separate datasheet for 1N5614US to 1N5622US)
Anwendungen
- General rectifier applications including full-bridge, half-bridge, freewheeling diode, etc.
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

