MICROCHIP JANTX1N6624US/TR
| Hersteller | |
| Herst.-Teilenr. | JANTX1N6624US/TR |
| LCSC-Nr. | C17611997 |
| Verp. | - |
| Kundennummer | |
| Hauptmerkm. | 50ns 990V 1.55V@1A 1A Single Diodes RoHS |
| Datenblatt |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | - | |
| Reverse Recovery Time (trr) | 50ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 990V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.55V@1A | |
| Reverse Leakage Current (Ir) | 500nA@990V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 1A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | - | |
| Reverse Recovery Time (trr) | 50ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 990V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.55V@1A | |
| Reverse Leakage Current (Ir) | 500nA@990V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 1A |
Beschreibung
This series of "ultra-fast recovery" rectifier diodes complies with MIL-PRF-19500/585 and is designed for high-reliability applications where failure is not an option. These industry-recognized rectifiers, rated at 1.5 to 2.0 amperes and peak repetitive reverse voltages of 200 to 1000 volts, are hermetically sealed in void-free glass construction with internal "Class 1" metallurgical bonds. These devices are also available in axial-lead packages for through-hole mounting (refer to separate datasheet for 1N6620 through 1N6625). Microsemi offers many additional rectifier products to meet higher and lower current ratings and various recovery time speed requirements, including standard, fast, and ultra-fast device types in both through-hole and SMT packages.
Merkmale
- Surface mount series equivalent to JEDEC-registered 1N6620 to 1N6625 series
- Void-free hermetically sealed glass package
- Extremely rugged construction
- Triple passivation
- Internal "first-level" metallurgical bonding
- JAN, JANTX, and JANTXV versions available per MIL-PRF-19500/585
- JANS screening per MIL-PRF-19500 available using "SP" prefix, e.g., SP6620US, SP6624US, etc.
- Axial-lead equivalents also available (refer to separate datasheet for 1N6620 to 1N6625)
Anwendungen
- 200 to 1000V ultrafast recovery rectifier series
- Switching power supplies or other applications requiring extremely fast switching and low forward loss
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 33.9696 | $ 33.97 |
| 200+ | $ 13.5548 | $ 2710.96 |
| 500+ | $ 13.102 | $ 6551.00 |
| 1,000+ | $ 12.8778 | $ 12877.80 |
Standardgehäuse1/Full Reel | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | - | |
| Reverse Recovery Time (trr) | 50ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 990V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.55V@1A | |
| Reverse Leakage Current (Ir) | 500nA@990V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 1A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | - | |
| Reverse Recovery Time (trr) | 50ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 990V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.55V@1A | |
| Reverse Leakage Current (Ir) | 500nA@990V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 1A |
Beschreibung
This series of "ultra-fast recovery" rectifier diodes complies with MIL-PRF-19500/585 and is designed for high-reliability applications where failure is not an option. These industry-recognized rectifiers, rated at 1.5 to 2.0 amperes and peak repetitive reverse voltages of 200 to 1000 volts, are hermetically sealed in void-free glass construction with internal "Class 1" metallurgical bonds. These devices are also available in axial-lead packages for through-hole mounting (refer to separate datasheet for 1N6620 through 1N6625). Microsemi offers many additional rectifier products to meet higher and lower current ratings and various recovery time speed requirements, including standard, fast, and ultra-fast device types in both through-hole and SMT packages.
Merkmale
- Surface mount series equivalent to JEDEC-registered 1N6620 to 1N6625 series
- Void-free hermetically sealed glass package
- Extremely rugged construction
- Triple passivation
- Internal "first-level" metallurgical bonding
- JAN, JANTX, and JANTXV versions available per MIL-PRF-19500/585
- JANS screening per MIL-PRF-19500 available using "SP" prefix, e.g., SP6620US, SP6624US, etc.
- Axial-lead equivalents also available (refer to separate datasheet for 1N6620 to 1N6625)
Anwendungen
- 200 to 1000V ultrafast recovery rectifier series
- Switching power supplies or other applications requiring extremely fast switching and low forward loss
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

