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EDA-ModelleEasyEDA
Solid State System MR501
| Hersteller | Solid State SystemAsian Brands |
| Herst.-Teilenr. | MR501 |
| LCSC-Nr. | C17538932 |
| Verp. | Through Hole |
| Kundennummer | |
| Hauptmerkm. | 100V 1.1V@9.4A 3A Through Hole Single Diodes RoHS |
| Datenblatt | Solid State System MR501 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | Solid State System | |
| Verp. | Through Hole | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - Forward(Vf@If) | 1.1V@9.4A | |
| Reverse Leakage Current (Ir) | 5uA@100V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 3A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | Solid State System | |
| Verp. | Through Hole | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Typ | Beschreibung | |
|---|---|---|
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - Forward(Vf@If) | 1.1V@9.4A | |
| Reverse Leakage Current (Ir) | 5uA@100V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 3A |
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Beschreibung
KI-Übersetzung
Designed for power supplies and other applications requiring: high current in small size, high surge current capability, low forward voltage drop, and economical plastic package.
Merkmale
KI-Übersetzung
- High current with small size
- High surge current capability
- Low forward voltage drop
- Cost-effective plastic package
Anwendungen
KI-Übersetzung
Power Supply
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | Solid State System | |
| Verp. | Through Hole | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - Forward(Vf@If) | 1.1V@9.4A | |
| Reverse Leakage Current (Ir) | 5uA@100V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 3A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | Solid State System | |
| Verp. | Through Hole | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Typ | Beschreibung | |
|---|---|---|
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - Forward(Vf@If) | 1.1V@9.4A | |
| Reverse Leakage Current (Ir) | 5uA@100V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 3A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Designed for power supplies and other applications requiring: high current in small size, high surge current capability, low forward voltage drop, and economical plastic package.
Merkmale
KI-Übersetzung
- High current with small size
- High surge current capability
- Low forward voltage drop
- Cost-effective plastic package
Anwendungen
KI-Übersetzung
Power Supply
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |