MICROCHIP 1N6910UTK2AS/TR

This Schottky diode is designed for applications requiring high power density and excellent thermal dissipation performance (typically 0.85 - 0.95°C/W). The 1N6910UTK2AS through 1N6912UTK2AS devices feature anode-to-tab polarity (standard), with cathode-to-tab polarity also available as 1N6910UTK2CS through 1N6912UTK2CS. The component is also orderable in a tabless version. Upscreening services for high-reliability applications are available as well. Microsemi offers a wide range of additional products to address voltage regulation applications at both higher and lower power levels.

• JEDEC registered 1N6910 - 1N6912 series.
• Oxide passivated junction construction.
• Guard ring protected for enhanced reverse energy capability.
• Epitaxial construction for minimum forward voltage drop.
• Hermetically sealed, low-profile ceramic SMT power package.
• Available as JAN, JANTX, and JANTXV per MIL-PRF-19500/723 (see part nomenclature for all available options).
• RoHS compliant versions available (commercial grade only).

• Low package inductance.
• Ultra-low thermal resistance.
• Leadless versions available for special requirements, such as 1N6910UTK2, 1N6911UTK2, and 1N6912UTK2.
• Robust ceramic and metal construction, no wire bonding.
• High surge capability with dual-sided heat dissipation.