ROHM RFUH10NS4STL
| Hersteller | |
| Herst.-Teilenr. | RFUH10NS4STL |
| LCSC-Nr. | C17300201 |
| Verp. | TO-263-3 |
| Kundennummer | |
| Hauptmerkm. | 15ns 430V 1 Independent 1.45V@10A 10A TO-263-3 Single Diodes RoHS |
| Datenblatt | ROHM RFUH10NS4STL |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | ROHM | |
| Verp. | TO-263-3 | |
| Reverse Recovery Time (trr) | 15ns | |
| Voltage - DC Reverse (Vr) (Max) | 430V | |
| Operating Junction Temperature Range | - | |
| Diode Configuration | 1 Independent | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.45V@10A | |
| Reverse Leakage Current (Ir) | 50nA@430V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 10A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | ROHM | |
| Verp. | TO-263-3 | |
| Reverse Recovery Time (trr) | 15ns | |
| Voltage - DC Reverse (Vr) (Max) | 430V | |
| Operating Junction Temperature Range | - |
| Typ | Beschreibung | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.45V@10A | |
| Reverse Leakage Current (Ir) | 50nA@430V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 10A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Ultra-low switching losses
- High current overload capability
Anwendungen
KI-Übersetzung
- General purpose rectification
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | ROHM | |
| Verp. | TO-263-3 | |
| Reverse Recovery Time (trr) | 15ns | |
| Voltage - DC Reverse (Vr) (Max) | 430V | |
| Operating Junction Temperature Range | - | |
| Diode Configuration | 1 Independent | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.45V@10A | |
| Reverse Leakage Current (Ir) | 50nA@430V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 10A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | ROHM | |
| Verp. | TO-263-3 | |
| Reverse Recovery Time (trr) | 15ns | |
| Voltage - DC Reverse (Vr) (Max) | 430V | |
| Operating Junction Temperature Range | - |
| Typ | Beschreibung | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.45V@10A | |
| Reverse Leakage Current (Ir) | 50nA@430V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 10A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Ultra-low switching losses
- High current overload capability
Anwendungen
KI-Übersetzung
- General purpose rectification
C17300201 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

