Abbildung ähnlich
EDA-ModelleEasyEDA
TOSHIBA RN2301,LF
| Hersteller | |
| Herst.-Teilenr. | RN2301,LF |
| LCSC-Nr. | C17228459 |
| Verp. | SC-70 |
| Kundennummer | |
| Hauptmerkm. | 50V 30 100mA 100mW 1 PNP Pre-Biased SC-70 Single, Pre-Biased Bipolar Transistors RoHS |
| Datenblatt | TOSHIBA RN2301,LF |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | TOSHIBA | |
| Verp. | SC-70 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | 300mV@5mA,0.25mA | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 100mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@5mA,0.2V | |
| Voltage - Input(Max)(VI(off)) | 1.5V@0.1mA,5V | |
| Operating temperature | - | |
| type | - | |
| Number | 1 PNP Pre-Biased |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | TOSHIBA | |
| Verp. | SC-70 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | 300mV@5mA,0.25mA | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 100mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@5mA,0.2V | |
| Voltage - Input(Max)(VI(off)) | 1.5V@0.1mA,5V | |
| Operating temperature | - | |
| type | - | |
| Number | 1 PNP Pre-Biased |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- AEC-Q101 qualified
- The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time.
- Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs.
- Complementary to RN1301 to RN1306
Anwendungen
KI-Übersetzung
- Switching
- Inverter Circuits
- Interfacing Driver Circuits
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.0499 | $ 0.05 |
| 200+ | $ 0.02 | $ 4.00 |
| 500+ | $ 0.0193 | $ 9.65 |
| 1,000+ | $ 0.019 | $ 19.00 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | TOSHIBA | |
| Verp. | SC-70 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | 300mV@5mA,0.25mA | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 100mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@5mA,0.2V | |
| Voltage - Input(Max)(VI(off)) | 1.5V@0.1mA,5V | |
| Operating temperature | - | |
| type | - | |
| Number | 1 PNP Pre-Biased |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | TOSHIBA | |
| Verp. | SC-70 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | 300mV@5mA,0.25mA | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 100mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@5mA,0.2V | |
| Voltage - Input(Max)(VI(off)) | 1.5V@0.1mA,5V | |
| Operating temperature | - | |
| type | - | |
| Number | 1 PNP Pre-Biased |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- AEC-Q101 qualified
- The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time.
- Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs.
- Complementary to RN1301 to RN1306
Anwendungen
KI-Übersetzung
- Switching
- Inverter Circuits
- Interfacing Driver Circuits
C17228459 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| RN2302,LF | TOSHIBA | Ähnliche | USM | 140 | $0.0141 $0.078 | ||
| DDTA114EUA-7-F | DIODES | Ähnliche | SOT-323 | 1,065 | $ 0.0604 | ||
| ADTA114EUAQ-7 | DIODES | Ähnliche | SOT-323 | 40 | $ 0.0421 | ||
| PDTA123EU,115 | Nexperia | Ähnliche | SOT-323 | 50 | $ 0.3963 | ||
| PDTA124XU,115 | Nexperia | Ähnliche | SOT-323-3 | 200 | $ 0.119 |