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ISSI IS61LPD51236A-200TQLI

제조업체
ISSIAsian Brands
제조사 품번
IS61LPD51236A-200TQLI
LCSC 번호
C1352968
포장
TQFP-100(14x20)
고객 번호
주요 제원
18Mbit Parallel Port (Parallel) TQFP-100(14x20) Memory RoHS
데이터시트ISSI IS61LPD51236A-200TQLI
RoHS 준수1개 문서 이용 가능
대체 부품5
모든 주문 보장
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제품 사양

전체
타입설명
카테고리Integrated Circuits (ICs)/Memory/Memory
제조업체ISSI
포장TQFP-100(14x20)
Operating Temperature-40℃~+85℃
FeaturesAuto power-down function;Boundary scan (JTAG) function
Memory Size18Mbit
Voltage - Supply3.135V~3.465V;475mA
Access Time5ns
Standby Supply Current125mA
InterfaceParallel Port (Parallel)
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개요

AI 번역

The ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD51236A is organized as 524,288 words by 36 bits, and the IS61LPD/VPD102418A is organized as 1,048,576 words by 18 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.

Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be one to four bytes wide as controlled by the write control inputs.

Separate byte enables allow individual bytes to be written. The byte write operation is performed by using the byte write enable (BWE) input combined with one or more individual byte write signals (BWx overline). In addition, Global Write (GW overline) is available for writing all bytes at one time, regardless of the byte write controls.

Bursts can be initiated with either ADSP (Address Status Processor) or ADSC (Address Status Cache Controller) input pins. Subsequent burst addresses can be generated internally and controlled by the ADV overline (burst address advance) input pin.

The mode pin is used to select the burst sequence order, Linear burst is achieved when this pin is tied LOW. Interleave burst is achieved when this pin is tied HIGH or left floating.

주요 특징

AI 번역
  • Internal self-timed write cycle
  • Individual Byte Write Control and Global Write Clock controlled, registered address, data and control
  • Burst sequence control using MODE input
  • Three chip enable option for simple depth expansion and address pipelining
  • Common data inputs and data outputs
  • Auto Power-down during deselect
  • Double cycle deselect
  • Snooze MODE for reduced-power standby
  • JTAG Boundary Scan for PBGA package
  • Power Supply LPD: Vdd 3.3V ± 5%, Vddq 3.3V/2.5V ± 5% VPD: Vdd 2.5V ± 5%, Vddq 2.5V ± 5%
  • JEDEC 100-Pin TQFP and 165-pin PBGA package
  • Lead-free available