{"id":1575,"date":"2024-09-04T02:17:56","date_gmt":"2024-09-04T02:17:56","guid":{"rendered":"https:\/\/blogs.lcsc.com\/blog\/?p=1575"},"modified":"2025-08-05T08:05:50","modified_gmt":"2025-08-05T08:05:50","slug":"tokmas-sic-mosfet-product-introduction","status":"publish","type":"post","link":"https:\/\/blogs.lcsc.com\/blog\/tokmas-sic-mosfet-product-introduction\/","title":{"rendered":"Tokmas SiC\u00a0MOSFET Product Introduction"},"content":{"rendered":"

This week, LCSC’s supplier, Tokmas, will introduce its Silicon Carbide\u00a0(SiC) MOSFET products. In the following sections, we will take a closer look at the product line of Tokmas SiC\u00a0MOSFETs and explore their main applications.<\/p>\n

Its main products include silicon carbide diodes, silicon carbide MOSFETs, CoolMOS, IGBTs, Hall current sensors, thyristors, gallium nitride (GaN) MOSFETs, fast recovery diodes, Schottky diodes, and so on. The TOKMAS brand’s silicon carbide diodes and silicon carbide MOSFETs hold a leading position in terms of technology and are comparable to international first-line brands.<\/p>\n

SIC MOSFET Device Selection Table<\/b><\/strong><\/h5>\n\n\n\n\n\n\n\n\n\n\n\n\n\n
<\/td>\nMfr.\u00a0Part Number<\/strong><\/td>\nBreakdown voltage (V)<\/strong><\/td>\nOn-resistance (m\u03a9)<\/strong><\/td>\nCurrent<\/strong><\/p>\n

(A)<\/strong><\/td>\n

Threshold voltage (V)<\/strong><\/td>\nMaximum<\/strong><\/p>\n

Operating junction temperature (\u00b0C)<\/strong><\/td>\n

Package<\/strong><\/td>\n<\/tr>\n
1<\/td>\nCI30N65SM<\/a><\/td>\n650<\/td>\n60<\/td>\n30<\/td>\n2.4<\/td>\n150<\/td>\nTO-247-3L<\/td>\n<\/tr>\n
2<\/td>\nCI90N120SM <\/a><\/td>\n1200<\/td>\n25<\/td>\n80<\/td>\n2.4<\/td>\n150<\/td>\nTO-247-3L<\/td>\n<\/tr>\n
3<\/td>\nCI90N120SM4 <\/a><\/td>\n1200<\/td>\n25<\/td>\n80<\/td>\n2.4<\/td>\n150<\/td>\nTO-247-4L<\/td>\n<\/tr>\n
4<\/td>\nCI60N120SM<\/a><\/td>\n1200<\/td>\n40<\/td>\n40<\/td>\n2.4<\/td>\n150<\/td>\nTO-247-3L<\/td>\n<\/tr>\n
5<\/td>\nCI60N120SM4<\/a><\/td>\n1200<\/td>\n40<\/td>\n40<\/td>\n2.4<\/td>\n150<\/td>\nTO-247-4L<\/td>\n<\/tr>\n
6<\/td>\nCI30N120SM <\/a><\/td>\n1200<\/td>\n80<\/td>\n20<\/td>\n2.4<\/td>\n150<\/td>\nTO-247-3L<\/td>\n<\/tr>\n
7<\/td>\nCI30N120SM4<\/a><\/td>\n1200<\/td>\n80<\/td>\n20<\/td>\n2.4<\/td>\n150<\/td>\nTO-247-4L<\/td>\n<\/tr>\n
8<\/td>\nCI19N120SM <\/a><\/td>\n1200<\/td>\n160<\/td>\n10<\/td>\n2.4<\/td>\n150<\/td>\nTO-247-3L<\/td>\n<\/tr>\n
9<\/td>\nCI7N170SM <\/a><\/td>\n1700<\/td>\n1000<\/td>\n3.5<\/td>\n2.4<\/td>\n150<\/td>\nTO-247-3L<\/td>\n<\/tr>\n
<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n
CI30N120SM4<\/b><\/strong>\u00a0<\/b><\/strong>SiC<\/b><\/strong>\u00a0MOSFE<\/b><\/strong>T<\/b><\/strong><\/h5>\n

The CI30N120SM4 Silicon Carbide Power MOSFET is an N-Channel enhancement mode device that offers several key features and benefits:<\/p>\n

1. It provides high blocking voltage while maintaining low on-resistance, which enhances system efficiency.<\/p>\n

2. The device supports high-speed switching with low capacitances, contributing to reduced cooling requirements.<\/p>\n

3. It is easy to parallel and simple to drive, which increases power density.<\/p>\n

4. The MOSFET exhibits avalanche ruggedness, ensuring reliability under harsh conditions.<\/p>\n

5. It is halogen-free and complies with RoHS standards, making it an environmentally friendly choice.<\/p>\n

These attributes contribute to higher system efficiency, lower cooling requirements, greater power density, and the enhanced capability to increase the system’s switching frequency.<\/p>\n

SIC MOSFET Product Applications<\/b><\/strong><\/h5>\n
    \n
  1. On-board Charger (Bidirectional OBC)<\/strong><\/li>\n<\/ol>\n

    \"SIC\"SIC<\/p>\n